High Side Gate Driver Charge Pump

Its 3 high side and 3 low side output stages are powerful enough to drive mosfets with a gate charge of 400 nc with rise and fall times of approximately 150 ns.
High side gate driver charge pump. The lt1910 is a high side gate driver that allows the use of low cost n channel power mosfets for high side switching applications. Drives the gate of an external power mosfet. Typical applications are cooling fan water pump electrohydraulic and electric power steering. 4 providing continuous gate drive using a charge pump slva444 february 2011 submit documentation feedback.
It contains a completely self contained charge pump to fully enhance an n channel mosfet switch with no external components when the internal drain comparator senses that the switch current has exceeded the preset leve. The mic5019 operates from a 2 7v to 9v supply and generates gate voltages of 9 2v from a 3v supply and 16v from a 9v supply. Charge pumps are used in h bridges in high side drivers for gate driving high side n channel power mosfets and igbts. Dedicated high side drivers make life easier the control ic drivers from international rectifier provide.
The device consumes a low 77µa of. Here is a tested version of floating charge pump. When the centre of a half bridge goes low the capacitor is charged through a diode and this charge is used to later drive the gate of the high side fet a few volts above the source voltage so as to switch it on. A bootstrap capacitor from vboost to the fet source pin supplies charge to quickly enhance the gate output during.
I found two documents particularly helpful. The tle7183qu is designed for a 12 v power net. The max1614 uses an internal monolithic charge pump and low dropout linear regulator to supply the required 8v vgs voltage to fully enhance an n channel mosfet high side switch figure 1. Because the capacitor retains the voltage that passes across it the resulting waveform is a square wave that goes from vcc to twice vcc that is 2 vcc.
Addition of a simple charge pump both the fast switching. Ti discrete charge pump design slva398a and ir hv floating mos gate driver ics an 978. The mic5019 is a high side mosfet driver with integrated charge pump designed to switch an n channel enhancement type mosfet control signal in high side or low side applications. Output switches high d1 turns off and the other side of c2 is charged to vcc.
The charge pump typically supplies 30μa charging 800pf of gate capacitance in 400μs vbatt 15v. Two scenarios was tested vin 56vdc in both case. Also limits vgs to 15v maximum to prevent gate to source damage. 8vboost charge pump boost capacitor.